Higo, is this article specifically about 4D-S technology or someone elses?
The reason I ask is that the article mentions aluminum oxide (AlxOy) based resistive memory whereas 4D-S use a different material known as PCMO.
Aluminium oxide is a type of ceramic that normally requires high temperatures to deposit it on the silicon wafer. This risks damage to circuit elements placed on the wafer in earlier fabrication steps.
In contrast, the PCMO material identified by 4D-S can be applied using relatively low temperatures, thereby addressing one of the problems inherent in an alternative technology based on alumium oxide
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