Noting a few newbie questions recently, here is an extract from Shaw's analysis work last year. Many of the questions raised are addressed here:
" The Holy Grail of memory technology lies somewhere in the space between the two main memory technologies used today; NAND FLASH (high retention of data ~3 years, but low read speed) and DRAM (high read speed 50 nanoseconds - 500x faster than FLASH, but low retention ~seconds). This is the battleground for next generation memory technology, referred to as Storage Class Memory. FLASH & DRAM are separate markets worth ~USD40bn and ~USD50bn pa respectively; Storage Class Memory, according to industry estimates, if it were here today would potentially be worth USD30bn. In the future, at the rate data is accumulating it could be worth a lot more. 4DS’s ReRAM is starting to tick all the boxes. The combination of speed and no errors that 4DS has reported, once incorporated into a 4DS ReRAM chip, will deliver most of the characteristics required. In order of importance, they are: non-volatile (4DS’s ReRAM ticks this box ), is fast to read (4DS ), excellent endurance (4DS ), high density (4DS ), reduced power consumption (4DS ), all while remaining affordable (4DS ). The last remaining box for 4DS to tick is data retention. A data retention update is expected next quarter; a retention closer to NAND FLASH than DRAM with read speed close to DRAM would be industry transforming.
The competition has disappointed. Industry has invested billions looking for something to sit in between FLASH and DRAM, but 4DS is not aware of any other ReRAM technology that can make the same latency (read speed) claim that it now can and the only competing soon to be commercially available technology is 3D X Point by Intel and Micron. Initially they stated 3D XPoint would be 1000xs faster than NAND FLASH, it has since turned out to be a disappointing 10x faster leaving it miles behind DRAM (and now 4DS). It is 125x more dense than DRAM, but not that dense compared with NAND FLASH and it is expected to cost ~$2.40 per gigabyte (DRAM costs ~$5 per gig; FLASH is ~25 cents per gig). Despite all this disappointment industry observers still expect 3D XPoint will find a place in the market because the properties of DRAM and NAND FLASH are so far apart, there is room for many successful new memory products with very different properties.
This announcement opens the door to business development discussions. With retention data expected next quarter, the technology will be unique and ready to be put into a chip, an undertaking 4DS has always indicated it would look to partner to achieve, possibly via a licensing deal or more likely acquisition.
Recommendation
Not Rated – While 4DS remains a speculative investment it has worked with the world’s largest storage company (Western Digital) for three years developing its Interface Switching ReRAM technology and it has just passed through the key technology hurdle asked of it. 4DS is not locked into a future with Western Digital, but it has a clear advantage over other memory companies that will now come knocking; and end users such as Google and Apple."
The update required here: As at today, all the boxes are now ticked, bar only the easiest one, the fab wafer.
In the meanwhile the horses have been saddled and the traveling investment show is underway.
Exciting times indeed.
Expand
