something you may find pertinent in your ongoing research.... that in fact the 2 original cell designs of both companies operate in ways that are almost identical - though clearly structured from different metals / materials and widely used industry oxides .... both are obviously CMOS compatible
neither of them have a 'physical material filament' ....both operate through created oxygen vacancy exchange across a crystalline interface formed under applied current. 4DS do not describe anything at this point other than what is held in their patent submissions and approvals and what is known through their market updates
Desus' own description of the 4DS 'Art'
hopefully the next flip door for 4DS kicks wide and the electrical verification process confirms the loop resolution procedure has indeed been resolved leading to a successful array implementation
I am not aware of cell structure or operational characteristics of the Fujitsu product so not qualified to comment in that regard.
this is not my opinion - it is the operational structure of the technology implemented by both companies
