4DS - Anything but Charting, page-23564

UPDATED ENDURANCE DISCUSSION

For every one oder of magnitude you are multiplying by 10

High Performance NAND FLASH : 10^5

Intel Optane PMem : 10^6 - 10^8 (closer to lower levels)

4DS Non-Filament IS ReRAM : 10^9 - 10^10 (upper levels not quantified - possibly 10^12)


20 June 2019 - Wafer Lot D10 (Lot 3)
- Endurance cycling has now moved into the tens of millions;
( This would have 4DS Memory at 10^7 )

24 June 2020 - Additional Wafer Lot being the First Non-Platform Lot (Process Conditions Contributed by Western Digital)
- Measured the highest speed and endurance in the Additional Wafers Lot that have ever been recorded by the Company.
- Endurance is two to three times (orders of magnitude) better than previously reported.Actual endurance may be significantly higherbut is currently not quantified due to available lab time and test equipment.
(This would have 4DS Memory between 10^9 - 10^10 +)

1 February 2021 - Second Non-Platform Lot
- Confirmed that the Company has been able to repeat the results for each of the key memory characteristics (speed, endurance and retention) that were achieved with the First Non-Platform Lot;
(Firmed - Endurance between 10^9 - 10^10 + )

Conclusion
4DS Memory with it’s previous test capabilities firmed up it's reach to 10^9 - 10^10 but with its limited test capabilities were unable to quantify the upper limits of endurance which they termed it to be "significantly higher". With that being said, we would have to say at minimum Endurance would be at 10^9 meaning Endurance cycling would have moved into the Billions.