Ann: Weebit Nano successfully qualifies its ReRAM module, page-125

I’m just shooting the breeze here with this article

https://www.aspistrategist.org.au/seismic-shifts-underway-in-global-semiconductor-market-as-us-accelerates-decoupling-from-china/ stating :

”Perhaps the greatest impact will be felt in the global 3D NAND semiconductor manufacturing sector. The 3D NAND flash memory is a technology first unveiled in 2013 by Samsung Electronics, which introduced a method of scaling the memory size by stackingseveral 2D NAND planar layers to form nano skyscrapers. The US controls apply to 3D NAND chips of 128 layers or more, which are fabricated through a high-precision process with more than 1,000 consecutive processing steps that require the continuous operation of a set of semiconductor processing workhorses.”

So the article firmly implies that stringent controls will be placed around the supply of the most popular type of flash memory being 3D NAND technology available to Chinese interests. So by implication then, does this mean that the same controls will apply to the next generations of memory that seek to supersede flash, one being of course reram memory cells? Confirmation then that we won’t be seeing any Chinese company names in the (hopefully) upcoming fab and customer announcements management have been hinting at of late?

Understanding that Weebit is of coarse an Israeli company but its now seemingly interwoven within the US defence apparatus and possibly bound by certain rules and expectations.