Weebit - 2023 and beyond, page-305

thanks @flight11
From (delete 2 spaces)
http://myebookglobal .com/elecspec/ ES-Jan-2023.pdf
1. Power consumption
A typical flash device consumes 100x more programming power compared to
an emerging memory such as resistive non-volatile memory (ReRAM or RRAM).
Flash also requires programming voltage above 10V while ReRAM requires less
than 2.5V. This means flash can require a 10x larger battery (or multiple batteries),
resulting in a larger or more expensive data logger, or one with a significantly shorter
lifetime. Using compression to reduce flash size requires more computing power – so
it’s still a higher power solution.

2.Reliability in all environmental conditions:
One drawback of flash memory is that it can’t withstand high levels of radiation,
so when used in harsh environments, it often requires shielding or other complex
design workarounds. Emerging NVM technologies offer alternatives. ReRAM cells
are inherently immune to various types of radiation and electromagnetic fields.
ReRAM also demonstrates high thermal stability and reliability, with Weebit’s own
ReRAM able to retain data for more than 10 years at 125+°C.

3. Write speed
In some applications, the last seconds of data logging are most important. If a
system suddenly powers off, this ‘last gust’information may be key to finding out what
happened.
Data loggers for such applications need not only highly reliable NVM, but also fast
write speed. With an external flash device, data must be written to external memory
using serial interfaces, so flash memory programming time is slower compared to
embedded ReRAM. Moreover, programming flash (either external or integrated) requires
a page erase cycle before programming a new page, making the write cycle even
longer.
With slower programming time, critical data can be lost. To guard against this, such
flash-based systems often require large, expensive, and unreliable capacitors to
maintain enough energy for the ‘last gust’ write operation.
A fast embedded emerging NVM solution such as ReRAM provides clear advantages,
with direct read/write functions and bit addressability, leading to fast cell read/write
and enhanced system performance. ReRAM has typically 100x faster write access time
than flash.

4. Security
Data loggers can be a weak point for cyber-attacks. With external NVM, it’s
possible to ‘listen’ to and change data via external buses – another reason to consider
embedded NVM. Embedding NVM with the system’s microcontroller adds very little
cost while saving power, increasing write speed, and improving security.
Weebit ReRAM requires only two additional masks (versus 10+ added masks
for flash). It also uses fab-friendly materials, so it only adds ~5% to wafer cost, compared
to flash which adds ~10-20% and MRAM which can add ~30-40%.
FRAM is today a leading emerging memory technology for data logging since it has a
very high write endurance. However, there is a price to pay in terms of memory size.
A typical FRAM cell is ~2X larger than the Weebit ReRAM cell.

WBT wins on all four counts.
IMO. DYOR.