I have read further into the recent earth mountain patent. It would appear it goes on further regarding placing the chip ontop of another structure, placing a compound around each pixel to slightly raise it off the substrate so that it can move upwards and in particular downwards.
here is the full translation:
Specific implementationIn order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is described in further detail hereinafter in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are intended to explain the present invention only and are not intended to limit it.It is noted that when an element is said to be "fixed to" or "set on" another element, it may be directly on the other element or indirectly on that other element. When an element is said to be "attached" to another element, it may be directly attached to the other element or indirectly attached to the other element.In addition, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, the features qualified with "first" and "second" may explicitly or implicitly include one or more such features. In the description of the invention, "plurality" means two or more, unless otherwise expressly and specifically limited. A "number" means one or more unless otherwise expressly and specifically limited. "left", "right", etc. indicate orientation or positional relationships based on those shown in the accompanying drawings and are intended only to facilitate and simplify the description of the invention, not to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operate in a particular The relationship is based on the orientation or location relationship shown in the accompanying drawings only to facilitate the description of the invention and to simplify the description, and not to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and therefore cannot be construed as limiting the invention.In the description of the present invention, it is to be noted that, unless otherwise expressly specified and limited, the terms "mounted", "connected", "connected" are to be understood in a broad sense, for example, they may be For example, it can be a fixed connection, a removable connection, or a one-piece connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components or an interaction relationship between two components. To a person of ordinary skill in the art, the specific meaning of the above terms in the context of the present invention can be understood on a case-by-case basis.Referring to FIGS. 1 to 4, the present invention provides a pixel sound generating unit comprising an electrode structure layer 1, a diaphragm, a support structure, and an electrical isolation layer 4, the support structure being provided between the electrode structure layer 1 and the diaphragm, the support structure comprising a plurality of support bodies 3 spaced on the electrode structure layer 1; the electrical isolation layer 4 is provided laminated on the electrode structure layer 1 and the support structure for electrically isolation. Exemplarily, the material of the support body 3 can be an insulating material, and the electrode structure layer 1 can be an electrode layer made of polycrystalline silicon or an electrode layer made of SOI (Silicon-On-Insulator) wafer top layer silicon. In addition, the pixel generation unit also includes an insulating layer 2 on which the electrode structure layer 1 is laminated.With the above technical solution, the electrode structure layer 1 and the diaphragm are electrically isolated by the galvanic isolation layer 4, which prevents the diaphragm from moving downward to contact with the electrode structure layer 1 and improves the safety of the pixel generation unit; the support structure is provided between the electrode structure layer 1 and the diaphragm, and the diaphragm can be supported by the support structure and the galvanic isolation layer 4 when the diaphragm moves downward to avoid damage caused by the diaphragm moving downward. When the diaphragm is an ultra-thin diaphragm, the amplitude of the ultra-thin diaphragm is easy to be too large when it moves downward, resulting in damage, and the support structure and galvanic isolation layer 4 can support the ultra-thin diaphragm well to avoid damage when the diaphragm moves downward and improve the service life of the ultra-thin diaphragm; at the same time, the support structure and galvanic isolation layer 4 can increase the distance between the diaphragm At the same time, the distance between the diaphragm and the electrode structure layer 1 can be increased by the support structure and the electrical isolation layer 4, which reduces the actual electric field strength at the support structure, thus reducing the possibility of the support structure being broken by the voltage between the diaphragm and the electrode structure layer 1, thus improving the circuit safety and reliability of the pixel sound generating unit.As shown in FIGS. 2 and 3, further, the electrode structure layer 1 includes a split ring slot 11, the split ring slot 11 dividing the electrode structure layer 1 into an inner ring and an outer ring, the inner ring being electrically isolated from the outer ring, and the support body 3 being located on the inner ring. Exemplarily, the axis of the split ring slot 11 is perpendicular to the front surface of the insulating layer 2, the split ring slot 11 is provided through the electrode structure layer 1, and the ring interior may be a cylindrical structure; exemplarily, there are multiple split ring slots 11 and the number is the same as the number of support bodies 3, and the support bodies 3 are provided at the center of the ring interior, and the multiple split ring slots 11 may be distributed in an array. With this structure, the inside of the ring is electrically isolated from the outside of the ring, and the support body 3 is avoided to be electrically connected to the outside of the change, thus the actual electric field strength at the support structure can be further reduced, and the circuit safety and reliability of the pixel sound generating unit can be improved.As shown in Figure 3, further, the split ring slot 11 is filled with an insulating structure. With this structure, the insulating structure further electrically isolates the inside of the ring from the outside of the ring, improving the circuit safety and reliability of the pixel sound generating unit; by filling the split ring slot 11 with the insulating structure, the overall stability of the pixel sound generating unit can be improved.In some embodiments, the insulating structure and the galvanic isolation layer 4 are integral structures. Exemplarily, the insulating structure can be formed by chemical vapor deposition in the split ring slot 11, and the galvanic isolation layer 4 can be formed on the electrode structure layer 1 and the support structure. this structure is used to facilitate the molding of the insulating structure and the galvanic isolation layer 4 and further improve the overall stability of the pixel sound generating unit.In an optional way, the split ring slot 11 is a circular structure, and the difference between the inner diameter and outer diameter of the split ring slot 11 is from 0.5 μm to 2 μm. When the difference between the inner diameter and outer diameter of the split ring slot 11 is less than 0.5 μm, the slot width of the split ring slot 11 is narrow, and it is easy to electrically contact the inside of the ring with the outside of the ring, and it is not convenient to form the insulation structure of the split ring slot 11; when the difference between the inner diameter and outer diameter of the split ring slot 11 is greater than 2 μm When the difference between the inner diameter and outer diameter of the split ring slot 11 is greater than 2μm, the slot width of the split ring slot 11 is wider, and the overall size of the electrode structure layer 1 is reduced, which reduces the electrical strength of the electrode structure layer 1 and affects the normal vibration of the diaphragm. With this structure, when the difference between the inner diameter and outer diameter of the split ring slot 11 is 0.5μm to 2μm, the size of the split ring slot 11 is optimized to ensure the electrical isolation between the inside of the ring and the outside of the ring, and to facilitate the molding of the insulating structure of the split ring slot 11 to ensure the electrical strength of the electrode structure layer 1.As shown in FIG. 3, further, the support body 3 is a cylindrical structure, and the part of the electrically isolated layer 4 laminated on the support body 3 has a round chamfer; the diameter of the cross section of the support body 3 is 1 μm to 5 μm, and the difference between the inner diameter of the split ring slot 11 and the outer diameter of the support body 3 is 1 μm to 3 μm. exemplarily, the support body 3 is a cylindrical structure, and the part of the electrically isolated layer 4 laminated on the cylindrical structure is a circular table structure By forming rounded chamfers on the upper edges of the round table structure, the diaphragm can be prevented from breaking when it touches the corners of the electro-isolation layer 4, which improves the service life of the diaphragm and ensures that the support structure and the electro-isolation layer 4 can support the diaphragm well. Among them, when the diameter of the cross-section of the support body 3 is less than 1 μm, the cross-sectional area of the support body 3 is small, the support effect is poor, and it is easy to produce sharp corners to damage the diaphragm; when the diameter of the cross-section of the support body 3 is greater than 5 μm, the cross-sectional area of the support body 3 is larger, and the processing of the support body 3 is inconvenient. When the difference between the inner diameter of the split ring groove 11 and the outer diameter of the support body 3 is less than 1μm, the support body 3 is closer to the split ring groove 11, which is not convenient for the processing of the split ring groove 11, and when the difference between the inner diameter of the split ring groove 11 and the outer diameter of the support body 3 is greater than 3μm, the support body 3 is farther away from the split ring groove 11, and the size of the support body 3 is smaller or the size of the inner ring part is larger, which affects the support effect of the diaphragm and the electrode structure layer 1 electrical strength.In some embodiments, the material of the support body 3 is silicon dioxide or silicon nitride, and the height of the support body 3 is 150 nm to 300 nm. With this structure, silicon dioxide or silicon nitride has insulating ability to ensure the electrical isolation of the diaphragm from the electrode structure layer 1, and the height of the support body 3 is 150 nm to 300 nm, which can make the support body 3 support the diaphragm well.In some other embodiments, the material of the galvanic isolation layer 4 is silicon nitride, and the thickness of the galvanic isolation layer 4 is 150 nm to 500 nm. With this structure, silicon nitride has the insulating ability to ensure the galvanic isolation of the diaphragm from the electrode structure layer 1, and the thickness of the galvanic isolation layer 4 is 150 nm to 500 nm, which can increase the distance between the diaphragm and the electrode structure layer 1 and reduce the actual electric field at the support structure strength, thus reducing the possibility of the support structure being penetrated by the voltage between the diaphragm and the electrode structure layer 1, thereby improving the circuit safety and reliability of the pixel sound generation unit.In other embodiments, the material of the support body 3 is silicon dioxide or silicon nitride, and the height of the support body 3 is 150 nm to 300 nm, and the material of the galvanic isolation layer 4 is silicon nitride, and the thickness of the galvanic isolation layer 4 is 150 nm to 500 nm. With this structure, silicon dioxide or silicon nitride has the ability to insulate and ensure the galvanic isolation of the diaphragm and the electrode structure layer 1, and the height of the support body 3 is 150 nm to 300 nm, which can make the pixel sound unit circuit safe and reliable. 150nm～300nm, can make the support body 3 to the diaphragm for good support; silicon nitride has the insulating ability to ensure the electrical isolation of the diaphragm and the electrode structure layer 1, the thickness of the electrical isolation layer 4 is 150nm～500nm
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