Ann: Megabit Success, page-829

Future development options

With previous examination of the 4DS wafers confirming the successful programming of cells of the same size as present in the megabit memory array, the future focus will be on further optimising the etch process to ensure both residue-free etching and no crystalline damage to the 4DS PCMO layer.

Mr Yen said 4DS’ goal continues to be a focus on the uniqueness of its technology as an area-based ReRAM.

“imec’s megabit arrays have a lower limit of 60nm for a memory cell but 4DS testing has demonstrated that our ReRAM scales consistently across available cell geometries on megabit arrays,” he said.

“The read/write speed and endurance parameters are critical to the Company’s goals in the memory space requiring DRAM-like performance characteristics. 4DS’ ReRAM performance profile to suitably meet this goal has been clearly demonstrated on the Fourth Platform Lot.” DYOR.

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