@vinneh a summation from info provided and ReRam architecture.
We've been told ;
Verified persistent memory.
With variable and tuneable retention.
Persistent memory by it's definition bridges the gap between volatile memory (fast but temporary) and traditional storage devices (slower but non-volatile).
So we know it's operating in that grey space. We also have been told it's retention performance "varies" in that space and they can control that by tuning which is consistent with a number of published ReRAM research papers.
While not specific to 4ds the following is a fairly technical summary of the position.
https://research.utwente.nl/en/publications/tradeoff-between-data-retention-and-switching-speed-in-resistive-ReRam architectures by their nature trade off retention with a number of variables but significantly with temperature, power(energy) and speed.
The trade-off between speed and retention in ReRAM is often a result of the materials and operational characteristics of the specific technology. To achieve high-speed read and write operations, the resistance states of the ReRAM cell need to be easily changed. However, this can sometimes make the retention characteristics less favorable.
ReRAM cells that change resistance quickly (speed) may not be as stable over time and often experience resistance state drift, leading to data retention issues. Conversely, ReRAM cells optimized for long data retention may require more time and energy to write data, potentially impacting their speed.
