Ann: Results of Annual General Meeting, page-192

@dawnpatrol

Fact check yet again here for all concerned ( as simply as possible )
switching in PCMO structured reram operates via the transport of oxygen ions / oxygen vacancies created during reversible current shifts resulting in area based ionic transport across the interface.

these oxygen vacancies are related to 'hole traps' - these hole traps are created in the crystalline lattice due to the reversing bias polarity when applied to initiate the switching operation

WBT reram operates exactly the same way - they describe the oxygen vacancies as an oxygen 'filament' for the ionic transport under reverse bias polarity when applied to initiate the switching operation.

same same
some basic research in the switching interface of these technologies will support this fact