4DS - Anything but Charting, page-28562

Vinneh -

"pl5 represents significant risk and unknowns. not the least of which the relative changes in dielectric effects with a smaller cell geometry and lower voltages"

RERAM isn't like DRAM though - it's not a dielectric where you essentially hold an extremely small charge in a block of material 10s of nm in width.

You whack 4DS memory cells with a voltage - it changes resistance, not state of charge.

You reverse the polarity of the voltage, whack it again and the resistance changes back.

Reading the cell's data is akin to putting an ohmmeter on it to determine the resistance, not a voltmeter to read its state of charge.

DRAM an array of capacitors, RERAM is an array of variable resistors.

4DS and IMEC have managed to up the speed of the technology to the point they have something that betters DRAM in performance.

According to the company, the cost to produce 4DS RERAM will be in the ballpark of FLASH, not DRAM, so that in of itself is an economic proposition. DRAM is expensive. Now that 4DS RERAM can outperform DRAM, retention doesn't have to be the primary objective. They have had retention to satisfy the needs of SCM in the past, why is it going to change now?