Weebit - 2024 and beyond, page-1900

here are the competitors and none of em match wbt volume cost advantage

these are all current and in manufacture
Resistive RAM (ReRAM) is now widely used for cache memory due to its compactness, low power, and scalability.
TechInsights recently analyzed some embedded ReRAM chips manufactured by Fujitsu and TSMC, such as Fujitsu’s SPI ReRAM (12 Mb eReRAM), STMicroelectronics’ STWLC38JRM Power Receiver (256 Kb eReRAM), and Nordic Semiconductor’s Bluetooth 5.4 SoC nRF54L15 (12 Mb eReRAM) chips.
Regarding the materials,
Fujitsu adopted the TaOx resistive layer for 45-nm and 40-nm ReRAM devices, while TSMC integrated the HfOx layer for 40ULP and 22ULL embedded ReRAM.
Fujitsu added Ir for the inert metal materials, while TSMC used Ru.
For more information about ReRAM materials and scaling, please visit the TechInsights platform and blog; Scaling ReRAM Materials resistive Layers and Inert Metal Electrodes (Fujitsu, TSMC).

here is the link to techinsights - you need to create an account
https://auth.svc.techinsights.com/login/username?app=UNIFIEDUI-PROFILE#name=Memory%2520-%2520Embedded%2520%2526%2520Emerging%252C%2520Memory%2520-%2520%2520NAND%2520%2526%2520DRAM

thankyou to Jeongdong / Senior Technical Fellow at TechInsights
again great day all