Ann: Infineon Design Agreement and Company Update, page-631

Agreed, it does appear that imec’s universal memory vehicle is constrained by localised current formation, rather than achieving uniform current distribution across the entire interface area. Despite this limitation, 4DS Memory successfully declared a fully functional megabit memory array and published its performance (Platform 4) characteristics, demonstrating groundbreaking speed, endurance, with persistence (retention), although not at its full potential, due to shortfalls.

It’s likely imec’s memory vehicle is designed to natively support filamentary switching, which is characterised by localised current paths. However, 4DS’s ReRAM cells differ fundamentally from filament-based solutions, as they do not rely on a destructive switching process, which inherently impacts speed, endurance and degrades the memory cell’s performance over time. This distinction gives 4DS a significant advantage in terms of speed and endurance compared to traditional filament-based technologies. 4DS inability with imec’s memory vehicle to utilise the entire interface area likely had a direct impact Platform 4 performance metrics, primarily endurance. This would explain why 4DS Memory were unable to quantify the upper limits of endurance, a factor that influences retention performance. With that being said, results from Platform 4 exceeded expectations despite observing shortfalls.

With Infineon developing a custom memory macro to address the shortfalls, it is highly likely 4DS when unlocked, will achieve faster switching speeds, greater endurance, and improved retention, further enhancing the technology’s flexibility (tuning options) and broadening market adoption.

At this point, Ting’s is primarily focused on scalability (Platform 6) proving 20nm and not necessarily on furthering performance.