and stated the purpose of 'learnings based around mask/etch success at 20nm
this is one of the crucial outcomes for pl6 as the scaled cell will have very different stocastic variations related to patterning shadow ( line double) and annealing thermals related to that scale process also resulting in variationally obtuse outcomes.
( reactive ion etch to sidewall and surface)
very nice to have it in writing - should have been stated at the agm imo
congratulations to the company for solid news as good/bad or indifferent
plenty of hurdles ahead
just my opinion
Ann: 4DS Memory Successfully Completes Fifth Platform Lot, page-34
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