Flexible substrate SiOx + palladium insert releases switching stress via multiform process across adjacent cells in a mem array with high gain pulse read/write - (rising edge /falling edge pulse speeds 10ns)
Molas and Piccolboni patent published 26.12.24
closer to realising Tours work gaining faster pulse write switching speeds across selected cells within a rram array with forming stress removed - flexible and/or rigid substrate
game changing SiOx nvm
Tours' work (2014)
https://bpb-us-e2.wpmucdn.com/websites.umass.edu/dist/f/22202/files/2014/05/2014_ACS-Nano-2014_8_1410.pdf
weebit patent published multiform switching
https://patentscope.wipo.int/search/en/detail.jsf?docId=WO2024261509&_cid=P20-M69TDY-23053-1
the company won't be able to fab this stuff fast enough imo
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