the recent patent drop I posted earlier verifies that the 150 degree qualification success has solved these issues - that's one of the reasons industry will be paying much more attention post 150 qual - high temp data retention is an issue for all oxram / oxide reram devices as the oxygen vacancy 'filament' would become unstable due to thermal diffusion combined with the high ratio oxygen concentration when shifting hrs to the low resistance state
weebit have solved these issues entirely with an active diffusion ( 'scavenger' ) layer in the stack - the patent is worth reading for all those who want to understand the competitive advantage these guys are achieving imo
so switching variability, 'forming' and high temp retention solved - it's a highly significant achievement
just sayin
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