This phenomena based on that article where there is issues with crossbar leakage across a range of designs and is apparent with filamentary memory RRam devices as well as other types of capacitive memory devices using Crossbar selector. In regards to 4DS surface area, If Crossbar is looking at being used with 1T1R form, I think the the crosstalk will be far greater with 4DS non filamentary coupling. Another form of selector is under development for RRam to eliminate the issue of Crosstalk especially when shifting to lower geometries. The other part of the development is that when there is a call for a cell or cells to be updated, as it stands atm the whole memory array is updated due to the structure of Crossbar. With this new development that is going on the selector will only address those cells that needs to be updated with changes within the cycle and all other cells are not updated, ie: each cell has it's own address and this will eliminate Crosstalk. I have not seen any designs on the nature of the selector, but as RRam is heading to lower geometries, the need to eliminate Crosstalk is essential for data storage.
4DS Price at posting:
3.6¢ Sentiment: Hold Disclosure: Held
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