gallium nitride on silicon: vgan?, page-15

Here is a list of Bridgelux patents, I don't see any GAN on Silicon anywhere in there, perhaps I missed it?

http://www.patentgenius.com/assignee/BridgeluxInc.html

Assignee:
Bridgelux, Inc.
Address:
Sunnyvale, CA
No. of patents:
37
Patents:




Patent Number Title Of Patent Date Issued
D599053 Vertical fin LED lamp fixture August 25, 2009
D595011 Horizontal fin LED lamp fixture June 23, 2009
D592799 Verticle fin LED lamp fixture May 19, 2009
7968902 Light emitting devices with constant forward voltage June 28, 2011
A light emitting device and method for producing the same is disclosed. The light emitting device includes a semiconductor material, an electrode positioned on the semiconductor material, a wire bonding area, and a resistor connected between the wire bonding area and the electrode.
7960194 Method for manufacturing a reflective surface sub-assembly for a light-emitting device June 14, 2011
A method for manufacturing a reflective surface sub-assembly for a light-emitting device, comprising a substrate, at least one area reserved for placement of a light-emitting device assembly on the substrate, and a diffusive reflective layer applied on selected regions on the substrate,
7956546 Modular LED light bulb June 7, 2011
An LED-based lighting device and method for making the same are disclosed. The lighting device includes an LED light source mounted on a heat sink, a power adaptor, and a controller. The power adaptor is configured to be interchangeable with a conventional incandescent bulb power ada
7943949 III-nitride based on semiconductor device with low-resistance ohmic contacts May 17, 2011
The present invention utilizes high-indium-content In.sub.xGa.sub.1-xN islands (07939839 Series connected segmented LED May 10, 2011
A light source and method for making the same are disclosed. The light source includes a substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on th
7936135 Reconfigurable LED array and use in lighting system May 3, 2011
A light-emitting device capable of being powered by an AC power supply or an unregulated DC power supply is disclosed. The light-emitting device, in an aspect, is coupled to a controller, a light-emitting diode ("LED") array, and a power supply, wherein the power supply can be an AC powe
7935979 Wire bonding to connect electrodes May 3, 2011
A light emitting apparatus includes a semiconductor layer having an electrode with two traces physically separated from one another. The light emitting apparatus further includes a wire bond electrically connecting the two traces.
7915621 Inverted LED structure with improved light extraction March 29, 2011
A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of t
7901109 Heat sink apparatus for solid state lights March 8, 2011
Embodiments of the current invention seek to increase heat dissipation by affixing a separate or integrated heat sink to the solid state light, thus accomplishing increased heat dissipation via another device, instead of altering the solid state light itself. In this manner, embodiments
7897992 Low optical loss electrode structures for LEDs March 1, 2011
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The
7892870 Thermal management for LED February 22, 2011
A method and system for removing heat from an LED facilitates the fabrication of LEDs having enhanced brightness. A thermally conductive interposer can be attached to the top of the LED. Heat can flow through the top of the LED and into the interposer. The interposer can carry the he
7891838 Heat sink apparatus for solid state lights February 22, 2011
Embodiments of the current invention seek to increase heat dissipation by affixing a separate or integrated heat sink to the solid state light, thus accomplishing increased heat dissipation via a device different from the light, alleviating need for altering the solid state light itself.
7888688 Thermal management for LED February 15, 2011
A method and system for removing heat from an LED facilitates the fabrication of LEDs having enhanced brightness. A thermally conductive interposer can be attached to the top of the LED. Heat can flow through the top of the LED and into the interposer. The interposer can carry the he
7887384 Transparent ring LED assembly February 15, 2011
A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with respect to one another, for example. A machined surface of the substrate can enhance reflectivity of the LED assembly. A trans
7868340 Method and apparatus for generating white light from solid state light emitting devices January 11, 2011
An optical device capable of generating warm light using an array of phosphor islands situated over a phosphor layer is disclosed. The device includes a solid state light emitter, a phosphor layer, and phosphor islands. The solid state light emitter, in an aspect, is a light emitting
7863626 Surface mountable chip January 4, 2011
A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surfac
7859190 Phosphor layer arrangement for use with light emitting diodes December 28, 2010
Phosphor layer arrangement for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a least one light emitting diode, an encapsulation covering the at least one light emitting diode, a lens having a phosphor layer formed upon a bott
7858999 Light-emitting chip device with high thermal conductivity December 28, 2010
This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial
7855394 LED array package covered with a highly thermal conductive plate December 21, 2010
A light source includes a substrate, a light emitting diode on the substrate, and a phosphor layer over the light emitting diode. A plate is on the phosphor layer. An attachment member is coupled to the plate and is configured to conduct heat away from the plate.
7851819 Transparent heat spreader for LEDs December 14, 2010
A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach to a light emitting side of the LED. The top and/or bottom surface of the heat spreader can have a phosphor layer formed th
7839062 Optical platform to enable efficient LED emission November 23, 2010
An integrated multi-layer apparatus and method of producing the same is disclosed. The apparatus comprises an LED, a beam shaping layer, and a refracting layer between the beam shaping layer from the LED. The refracting layer may have an index of refraction lower than the index of re
7825427 Method and apparatus for generating phosphor film with textured surface November 2, 2010
An optical device deploring a phosphor layer having a textured surface to improve output of visual light is disclosed. A light emitting device includes a solid state light emitter and a phosphor layer. The solid state light emitter, for example, is configured to convert electrical en
7825425 LED structure to increase brightness November 2, 2010
A light emitting semiconductor device comprising an LED having an emission aperture located on a surface of the LED and the emission aperture has a size that is smaller than a surface area of the LED where the emission aperture is formed. The device further includes a reflector surroundi
7791090 GaN based LED having reduced thickness and method for making the same September 7, 2010
A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in t
7781780 Light emitting diodes with smooth surface for reflective electrode August 24, 2010
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3
7741134 Inverted LED structure with improved light extraction June 22, 2010
A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of t
7737455 Electrode structures for LEDs with increased active area June 15, 2010
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The
7732803 Light emitting device having stacked multiple LEDS June 8, 2010
A light emitting device and method of producing the same is disclosed. The light emitting device includes a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another.
7674639 GaN based LED with etched exposed surface for improved light extraction efficiency and method fo March 9, 2010
A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the act
7641939 Chemical vapor deposition reactor having multiple inlets January 5, 2010
A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.
7632691 Surface mountable chip December 15, 2009
A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surfac
7622746 Highly reflective mounting arrangement for LEDs November 24, 2009
A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.
7573074 LED electrode August 11, 2009
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The
7439548 Surface mountable chip October 21, 2008
A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surface
-----------------------------------------------------------------------------
But there are these patents which mention GAN as well as Silicon, so you can check them yourself if you want?

#
GaN based LED having reduced thickness and method ... - Patent Genius
The n-type GaN layer has a thickness less than 1.25 .mu.m. ... Assignee: Bridgelux, Inc. (Livermore, CA). Primary Examiner: Tran; Tan N .... carrier 51 is constructed from a conducting material such as silicon or a metal. ...
www.patentgenius.com/patent/7791090.html
#
III-nitride based on semiconductor device with low ... - Patent Genius
Assignee: BridgeLux, Inc. (Livermore, CA) ... xGa.sub.1-xN islands directly formed on a Ga-face ofsaid P-type GaN based layer, ... The method as claimed in claim 12, wherein said substrate includes sapphire, SiC, ZnO, Si, GaP or GaAs. ...
www.patentgenius.com/patent/7943949.html
#
Low optical loss electrode structures for LEDs ... - Patent Genius
29 Jun 2009 ? Assignee: Bridgelux, Inc. (Livermore, CA) ..... In the case of conventional Gallium Nitride (GaN) based LEDs on sapphire substrates ... -2.72 Gallium Nitride GaN 450 2.45 Nano Porous SiO2_Nano 633 1.1 0 Silicon Dioxide ...
www.patentgenius.com/patent/7897992.html
#
GaN based LED with etched exposed surface for improved light ...
The light scattering layer includes a GaN crystalline layer characterized by an N-face ... Assignee: Bridgelux, Inc (Sunnyvale, CA) ..... This layer is typically doped with Si atoms to a density of 10.sup.19 atoms/cm.sup.3 or greater. ...
www.patentgenius.com/patent/7674639.html
#
7858999 - Patent Genius - Patent Search
Assignee: Bridgelux, Inc. (Livermore, CA). Primary Examiner: Huynh; Andy ..... The epitaxial-layer structure 22 is formed of GaN-based semiconductor .... The substrate 21 can be previously prepared by using a silicon substrate as the ...
www.patentgenius.com/patent/7858999.html
#
Light emitting diodes with smooth surface for ... - Patent Genius
Assignee: Bridgelux, Inc. (Livermore, CA) .... In the manufacturing process, the n-type GaN-based layer 102 is formed on a substrate (not shown) .... hydrogen, nitrogen as well as dopant precursors for silicon and magnesium in a reactor ...
www.patentgenius.com/patent/7781780.html
#
Inverted LED structure with improved light ... - Patent Genius
Assignee: Bridgelux, Inc. (Livermore, CA) .... GaN based LEDs have shown particular promise in terms of increased light conversion efficiency ..... material systems having high indices of refraction such as Sapphire or Silicon Carbide. ...
www.patentgenius.com/patent/7915621.html
#
Surface mountable chip - Patent # 7863626 ... - Patent Genius
Assignee: Bridgelux, Inc. (Livermore, CA). Primary Examiner: Huynh; Andy ..... For example, silicon substrates are attractive candidates for applications ... In the case of GaN based LEDs on a sapphire substrate, the substrate can be ...
www.patentgenius.com/patent/7863626.html