Thanks Me73, I see that in one of the patents they refer to "forming a reflective ohmic-contact metal layer on the first doped semi-conductor layer" so they are using a reflector, whether this is the same as a DBR I am not sure?
I do believe the process they are using requires higher temperatures though for manufacture, and it isn't using epitaxial growth for the Silicon, I still think using cSOI will be much cheaper, if they ever get it out there?
gallium nitride on silicon: vgan?, page-25
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