Hi cjliebs,
Firstly, where did you get this 200mm wafer thing from? I have seen it rattled around here before but don't know where it originated.
Secondly, cREO is a process, not a specific wafer - see exert from original agreement below...
Initial commercialisation of the cREO™ technology by IQE will focus on application to Gallium Nitride (GaN) based products for the power electronics device market – worth several billion dollars annually and growing. If successfully commercialised, sales expectations could reach a few million GaN epiwafer products annually, resulting in significant royalty flows back to Translucent in future years.
And...
from the announcement the other day...
Using cREO™ templates IQE has demonstrated that it is able to tune the interfacial characteristics for GaN on Si. For RF applications, GaN on Si typically exhibits an undesirable ptype channel at the GaN / Si interface (AKA parasitic channel) that detrimentally affects RF efficiency.
Using its patented technology, IQE has demonstrated that the parasitic channel can be completely eliminated. In addition, IQE has shown that growth conditions can be tuned to generate and rationally engineer an n-type layer between the GaN and Si. This enables applications that require buried conductors for III-N on Si applications.
I have read nothing to indicate that the use of cREO is limited to 200mm wafers. However, as some types of 200mm wafers are selling a over $500US a unit anyway, my concern associated with your picture are limited.
I always welcome debate cj - if you can prove me wrong please do so.
SirKnight.
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