Enabling GaN RF and Power Electronics through Innovative MOCVD and Wet Etch Process Technologies
Emerging high frequency RF applications in connected devices and wireless infrastructure require improved power efficiencies at higher output power and smaller form factor at lower cost. GaN is ideally suited for these applications due to its higher power capability relative to silicon and GaAs at higher frequencies. High volume GaN devices require new innovations in MOCVD technology to deliver superior film quality, high yield, low defectivity and high uptime. 3D packaging is the most cost effective approach to integrate these RF devices with silicon CMOS modems. The use of TSVs has been implemented for stacking die to achieve vertical interconnects despite the high processing costs. These 3D concepts require a wafer thinning process to carefully remove the silicon. This talk will highlight innovative MOCVD and wet etch wafer thinning technologies to enable 5G GaN-based RF devices and reduce 3D packaging costs.
Speaker Somit Joshi Veeco
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(20min delay)