Ann: 4DS Granted 28th USA Patent, page-10

There it is!



Here is the patent link ... for those interested.

https://patents.google.com/patent/US10319907B1/en

Here is the salient text:

17. A method of using a memory device, the memory device comprising a template layer, a memory layer connected to the template layer, the memory layer having a variable resistance, wherein the crystalline structure of the memory layer matches the crystalline structure of the template layer, and wherein the memory device further comprises a conductive top electrode on the memory layer, wherein the top electrode and the memory layer cooperatively form a heterojunction memory structure, the method comprising: applying a first voltage difference across the template layer and the top electrode, whereby an electric field is generated in the memory layer, and such that a resistivity state of the memory layer is changed; applying a second voltage difference across the template layer and the top electrode; while the second voltage difference is applied, causing a first current to be conducted through the template layer, the memory layer, and the top electrode; and determining the resistivity state of the memory layer based on the second voltage and the first current.

Looks like a dictionary that has been struck by lightning