Ann: 4DS Technical Update, page-194

Thanks 8tey. If I understand you correctly, what you seem to be saying is that the characteristics of the latest memory cells - Third Non-platform Lot - are limited by the selectors used in the memory array? Hence "This significant performance improvement also means that full characterization (speed, endurance, retention) of memory cells with this fully crystalline PCMO material requires memory cells operating in a memory array where currents are controlled and limited by access devices."

"Access Devices" being the selectors embedded in the memory array.

So we might not be able to fully realise the performance characteristics from imec's Mbit memory platform.

You might therefore have to try different selectors to see which ones work best. Likely this would be HGST's domain after they have paid up.

If this is correct, coupled with the other statements about the Third Non-platform Lot, then they seem to be trying to tell us that they have made an amazing breakthough here. Have I understood this correctly?