Hola Beaches, can you please quantify what you mean by saying that “whilst the additional speed is nice it is still not going to be capable of competing in the DRAM space”?
Is that an opinion or factual based, as it isn’t immediately clear sorry.
And whilst it may be true it was the company who stated that the new process was compatible with both high volume dram and nand flash production. (Basically FanFET because no other process supports both Dram & 3D Nand)
That the decrease by order of magnitude of cell resistance had increased read speed by the same order of magnitude. (So is more than capable but with less resistance also equalling less power, so more efficient)
That the process material pcmo had proven itself at high temps, which overcomes a key challenge of mott transition.
And that they had achieved this on the most advanced nodes in the IMEC lab which means density is far superior to dram.
And with the product already recognized as having no traditional wearout mechanism due to being non filamentary, then the only question left is in regards to retention… Which at anything greater than milliseconds has dram beat all to hell…
Now I’m not sure if that is the companies objective but it sure seems like if they wanted too they could own DRAM….
Don’t you agree?
But Dram is entrenched so Hash’s postulation of hot tier cache (nvmSRAM) maybe the first target… Hopefully we’ll soon see 8tey
4DS Price at posting:
16.0¢ Sentiment: Buy Disclosure: Held
