If you have "near DRAM speed," then change the lithography to fully crystalline PCM, such that you get another order of magnitude speed you can infer that 4DS RERAM is "faster than DRAM." (At least in read speed). Which is what matters, as the chip isn't constantly being read and re-written at the clock speed. You don't need symmetric read and write speed.
Well, how about dialling back that speed to "equal to DRAM" with the aim of extracting gains in retention? What if you can up the retention to NAND equivalent, with DRAM speed as a result?
Then you have a like for like comparison with a legacy technology. Either way, you end up quantifying how flexible the tech is. You could do "custom tunes" for large customers.
But this all requires time and money.
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