Ann: BLG to Present at 2021 TechOpps Investment Conference, page-9

Out of left field:
Samsung has a 3D memory chip process which they are adapting for use in artificial intelligence. Using Bluglass' lower temperature RPCVD may be beneficial in producing better quality outcomes as high tmperatures can "blur" underlying layers by facilitating atomic migration.

US2021319293A1 NEUROMORPHICDEVICE AND OPERATING METHOD OF THE SAME
https://worldwide.espacenet.com/patent/search/family/078006456/publication/US2021319293A1?q=US2021319293

an operating method of a neuromorphic device including at least one three-dimensionalsynaptic array having a plurality of layers, theoperating method comprises upon receiving a plurality of input signalsindependent of each other, performing an artificial neural network computationon the input signals in a plurality of resistive memristor elementsof a layer corresponding to a word line selection signal, as a result of theartificial neural network computation, outputting a plurality of outputcurrents to neuron circuits through bit lines, summing the output currents tooutput a summed output current as an output voltage when it is more than apredetermined threshold and wherein the three-dimensional synaptic arrayperforms an artificial neural network computation independently for each layeractivated by the word line selection signal.

1 . A neuromorphic device,comprising:at least one synaptic array,

wherein the synaptic arrayincludes:

a plurality of input linesextending in a first direction and receiving input signals independently ofeach other from a plurality of axon circuits connected respectively thereto;

a plurality of bit linesextending in a second direction orthogonal to the first direction andoutputting output signals independently of each other;

a plurality of cell strings, eachincluding at least two resistive memristor elements and a string selecttransistor connected in series in a third direction between any one of theplurality of input lines and any one of the plurality of bit lines;

a plurality of electrode padsstacked while being spaced apart from each other in the third direction betweenthe plurality of input lines and the plurality of bit lines, and connected tothe string select transistor and the at least two resistive memristor elements;

a decoder configured to apply astring selection signal or a word line selection signal to each of theplurality of electrode pads; and

a plurality of neuron circuits,each being connected to one of the bit lines connected to one of the cellstrings, summing the output signals, converting, and outputting a summed signalwhen it is more than a predetermined threshold,

wherein the synaptic arrayperforms an artificial neural network computation on the input signals in theresistive memristor elements of a layer activated by the word line selectionsignal in at least one cell string to which the string selection signal isapplied.