4DS 8.89% 9.8¢ 4ds memory limited

4DS - Anything but Charting, page-24308

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    mjshackl,

    I'm still thinking about your statement sismissing vertical stacking (1 horizontal lectrode layer and 1 vertical electrode column that one single mask for many layers of ReRam Cells) for 4DS memory.

    I didn't understand your point because vertical stacking is now a standard for 3D NAND and a ReRam cell seemed easier to produce than a NAND cell.


    https://hotcopper.com.au/data/attachments/4521/4521080-2b35acd5d90ed5d5e5d2caf21a7f24dc.jpg




    From recent reading, it seems that punching a clean hole in many layers of electrodes and insulators is a process that can only be done with an EUV device.
    We know that imec has only one of the most recent EUV equipement from ASML.

    So, I think you are right : multiple layers of 4DS cells with vertical electrodes will not be processed at imec.

    But in that case, we are left with a cross point architecture (1 transistor 1 resistor) wich imply a mask for each layer of Reram cells.

    This solution was retained by intel for Optane (from memory, they used something different than a transistor to select the individual cells, but it is the same principle) .
    This has been said many years ago, to be a very costly process that would never reach mass production.

    So, my first question is :
    - What are the other advantages of a 4DS stand alone memory if it is as costly as Optane to produce ?
    Toshiba dismissed the Optane way years ago for this reason : too much masks and then too costly to produce.

    My second question is :
    - Are there other ways than vertical stacking to reduce costs ?
    for example, Crossbar announced two or treee years ago than they made a 1 terabyte memory on 1 chip using a different way of reducing the number of masks : puting a transistor under multiple layers of Crossbar cells. But this doesn't seem to have to have convinced the industry..

    An my third question is :
    - Are there some other uses of 4DS cell that could be needed, considering the most recent trends in the semiconductor industry.
    For example, AI and in-memory computing ...



    To make it shorter.

    DRAM is now at less than 1 $ per Gbt.

    - With the limited informations avaible, what could be a fair assesment of 4DS technology' use and value in this ecosystem ?

    I can't identified any if the cell can't be mass produced.
    But there must be a critical value somewhere otherwise we won't be seeing what we are seeing.

    May be an addition of chararacteristics that makes it unique ?







 
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