4DS - Anything but Charting, page-24310

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hashtagyolo

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20/07/22

22:01

Post #: 62639877
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Originally posted by Brabant90: ↑

mjshackl,

I'm still thinking about your statement sismissing vertical stacking (1 horizontal lectrode layer and 1 vertical electrode column that one single mask for many layers of ReRam Cells) for 4DS memory.

I didn't understand your point because vertical stacking is now a standard for 3D NAND and a ReRam cell seemed easier to produce than a NAND cell.

From recent reading, it seems that punching a clean hole in many layers of electrodes and insulators is a process that can only be done with an EUV device.
We know that imec has only one of the most recent EUV equipement from ASML.

So, I think you are right : multiple layers of 4DS cells with vertical electrodes will not be processed at imec.

But in that case, we are left with a cross point architecture (1 transistor 1 resistor) wich imply a mask for each layer of Reram cells.

This solution was retained by intel for Optane (from memory, they used something different than a transistor to select the individual cells, but it is the same principle) .
This has been said many years ago, to be a very costly process that would never reach mass production.

So, my first question is :
- What are the other advantages of a 4DS stand alone memory if it is as costly as Optane to produce ?
Toshiba dismissed the Optane way years ago for this reason : too much masks and then too costly to produce.

My second question is :
- Are there other ways than vertical stacking to reduce costs ?
for example, Crossbar announced two or treee years ago than they made a 1 terabyte memory on 1 chip using a different way of reducing the number of masks : puting a transistor under multiple layers of Crossbar cells. But this doesn't seem to have to have convinced the industry..

An my third question is :
- Are there some other uses of 4DS cell that could be needed, considering the most recent trends in the semiconductor industry.
For example, AI and in-memory computing ...

To make it shorter.

DRAM is now at less than 1 $ per Gbt.

- With the limited informations avaible, what could be a fair assesment of 4DS technology' use and value in this ecosystem ?

I can't identified any if the cell can't be mass produced.
But there must be a critical value somewhere otherwise we won't be seeing what we are seeing.

May be an addition of chararacteristics that makes it unique ?

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Please align your commentary and questions with the financial interests of longs only thanks.

No doubt or informed questions to the contrary at this time.

thanks for your understanding.

4DS Price at posting: 11.0¢ Sentiment: Buy Disclosure: Held
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