Ann: Megabit Success, page-791

We here at * thought that the outlying Aussie semiconducting, computer processing, memory breaking 4DS Memory (ASX:4DS) was the play of the week and I believe the share price might refelect that.

In a trading halt Monday, few could’ve predicted that when 4DS revealed testing on its Fourth Platform Lot produced results that are “significantly better than the board and management team at 4DS were expecting,” the share price might react by jumping about 140% in 50 minutes.

What does it all mean? Simple. After a really close look at the new data (and after a difficult 12 months ironing out development issues) 4DS has now shown for the first time a fully functioning megabit array with 60nm memory cells, access transistors and write circuitry.

Within the fully functioning megabit array 4DS now confirms these terrific milestones:

– Read and write speeds at 27 nanoseconds

– Endurance well in excess of 2 billion cycles; and

– Retention is persistent and tuneable

Chief technology officer Ting Yen said this week “these significant and robust results validate 4DS’ optimisation strategy and the decision to establish a duplicate of Imec’s custom testing hardware and software for the megabit array”, which they did at the 4DS Fremont facility.

Imec, BTW, is a top R&D and innovation hub in nano-electronics and digital technologies.

Over the coming weeks 4DS says additional analysis of the megabit array will continue and a meeting is being scheduled with Imec in early October to discuss strategic plans.

4DS Memory Limited (4DS, formerly Fitzroy Resources Limited)

With facilities located in Silicon Valley, 4DS is a semiconductor development company of non-volatile memory technology, pioneering Interface Switching ReRAM for next generation gigabyte storage in mobile and cloud. 4DS owns a patented IP portfolio, comprising 33 USA patents granted and 1 patent application, which have been developed in-house to create high-density Storage Class Memory. 4DS has a joint development agreement with Western Digital subsidiary HGST, a global storage leader, which accelerates the evolution of 4DS technology.

The 4DS Technology and Storage Class Memory

4DS is pioneering Interface Switching ReRAM, a unique area-based ReRAM technology best positioned for Storage Class Memory in mobile devices and cloud data centers.

Storage Class Memory is an emerging non-volatile memory segment positioned between the most successful system memory (DRAM) and the most successful silicon storage (NAND Flash).

Ideally, Storage Class Memory has DRAM (speed & endurance) and NAND Flash (cost & retention) characteristics.

There are many opportunities for new memories in the vast space between DRAM and NAND Flash, each with different speed, endurance and retention metrics. The two most extreme opportunities are “The space close to NAND Flash” and “The space close to DRAM”, each with different priorities for systems with respect to speed, endurance, and retention.