long road ahead - as per previous discussion no successful wet / dry etch outcome at 20nm in pcmo by multiple players Dory is unique to IMEC - implements 2 step process to achieve uniform pcmo (amorphous metrology) recess ( maintaining hard side wall and field) implementing metal oxidisation with isotropic plasm to achieve selective etch. without failure The parameters of the oxidisation is designed to achieve successful 'recess'
from previous port on the subject Will it scale ?40nm for data centre & 28 /22 nm & below for devices this is the conventional wisdom the etch and mask adjustments have been successful back out to 60nm and a successful functioning array achievedwill dry etch with a single hard mask maintain a clean sidewall and field on a pcmo process node at lower geometries ?
Success at 60nm - no market takers 20nm will be massive if they succeed - waiting game continues
4DS Price at posting:
10.5¢ Sentiment: None Disclosure: Held
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