For those more acquainted with semiconductor engineering/physics.
Does read & write speeds scale linearly with memory cell size reduction?
Having a basic understanding of how these things work - my intuition/logic tells me that a smaller cell would mean less distance/surface area for current to travel through, resulting in quicker speeds. But I know when things are shrunk to the nano level they can behave differently.
Looking to understand this relationship a bit better - all the additional technical talk here on the forum has got me excited. Sounds like Ting is an absolute weapon!
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