4DS 3.80% 8.2¢ 4ds memory limited

4DS - Anything but Charting, page-30529

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    4DS details that its RRAM is highly responsive with extremely fast single-shot write time of 4.7 ns, it has high endurance with up to 109 endurance demonstrated, and it is highly scalable. The company expects to demonstrate a 20 nm cell by Q4 2024............WAKE UP people
 
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