4DS - Anything but Charting, page-31085

to clarify, the 40nm achieved was done in an R&D setting and pre-Imec

As clearly stated in the annoucement

"imec has the same state-of-the-art process tools for 300mm wafers that are used in high-density high-volume production fabs"

To clarify further

"In October 2016, 4DS announced that it had successfully scaled its Interface Switching ReRAM cells to 40nm, also essential for Storage Class Memory. Until now, the innovative 4DS cell was fabricated with R&D process tools that differ from the state-of-the-art process tools that producers of high-density high-volume memories use in production fabs."