essentially the fact its reram
in the case of 4ds
the pulse initiated switching mechanism (pirs) and the area based interface exchange of calcium 'doped' ions between resistive states retaining data in the 'off' state
a chapter on the subject (chapter 2 specifically)
https://www.iue.tuwien.ac.at/phd/makarov/dissertationch2.html
and this more recently from eejournal
https://www.eejournal.com/article/will-pcmo-bring-the-magic-to-memristor-memory/
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