40nm working cell results? SP will Pop and poo, page-29

REMINDER:


The Storage Problem


The Challenge

• In modern day life, more and more information is being stored on computers, laptops, tablets, smartphones and more. Today this information is usually stored on Flash memory.
• This >$40 billion market simply will not be able to support the vast amounts of information that we need to store every day.
• Flash technology has approached to its scaling limits making a significant capacity increased very challenging. The 3D-NAND solution for increased capacity is demonstrating manufacturing difficulties and does not provide any speed, energy efficiency and reliability improvement.
• As we continue to store more and more information, a viable replacement for Flash memory is quickly becoming a necessity.

The Solution

Resistive Random-Access-Memory (ReRAM) is the most promising technology to replace Flash. Prof. Tour, one of the leading scientists of our decade and a member of the Weebit Advisory Board, together with his team created a ReRAM memory out of Silicon Oxide (SiOx) and is already the cheapest and most common material used in the semiconductor industry. They have demonstrated a working ReRAM SiOx device that outperforms Flash in every parameter.








Our Mission
Becoming the Next-Gen Emerging Memory Provider with a Faster, Energy Efficient, Durable & Cost Effective ReRAM Technology.