Just want to clear up the references to "low temperature". It is...

Just want to clear up the references to "low temperature". It is not a being made as comparison to Flash technology. It means that 4D-S have figured out a relatively gentle way to deposit a thin film of ceramic material (PCMO) on top of other circuit elements previously placed onto the silicon wafer in earlier fabrication steps. This is an advantage over some other proposed technologies that would need to introduce a high temperature step to the process flow to deposit a similar ceramic material.

Here is a quote from one of their patents:

Moreover, the process can be done at low temperature. The substrate temperature in forming a thin film approximately at the range of 300-400 deg.C and the process requires a short time. Since the thin film is formed at a very low temperature during substantially the whole process, the process can be applied to a highly integrated device to deposit an additional memory layer with a plurality of elements without damaging other elements previously deposited using conventional deposition.