@hashtagyolo"Edit: and yes, there will absolutely be more...

@hashtagyolo

"Edit: and yes, there will absolutely be more products than just 4DS technology. I cannot for the life of me see a situation where 4DS takes the entire SCM market. My rose coloured glasses may not be as strong as yours!"

If they ever do, tell ya what, ya'll tell em to come along and see what the Dige got cooking.....!!

And hey, there's always some old crates of vibrating rubber dog s*** coming out of Taiwan that need smart controllers to bring joy to the kiddies so we an always find em homes..... hehe

Memory Companies
4DS Memory
Adesto TechnologiesAvalanche TechnologyBAE SystemsBeSangCobham-AeroflexCrocus TechnologyCrossbarCypress SemiconductorEverSpinFerroelectric Memory CompanyFujitsu SemiconductorGrandisHPEHoneywellIBMimecIntelKnowmMicron TechnologyNanteroNECNVEOvonyxPanasonicQualcommRambusRamtronRenesas ElectronicsSamsung SemiconductorSeagate TechnologySK hynixSony CorporationSpin Transfer TechnologiesSymetrixTCLabTDKThin Film ElectronicsTexas Instruments (TI)Toshiba Memory CorporationUnidymWeebit NanoWestern Digital/SanDiskSemiconductor Fab CompaniesGlobal FoundriesSMICTowerJazzTSMCUMC

Although comprehensive analysis on MLC storage is provided for a single ReRAM cell, a similar and practically useful analysis on the MLC characteristics and resistance variability can be performed in a cross-point array in 1selector-1ReRAM cell configuration. Furthermore, ways to combine the ReRAM cell physical salability, MLC characteristics, and 3D stackability should be researched in order to fully exploit the benefits of ReRAM for ultrahigh density and inexpensive nonvolatile memory applications.

ReRAM is particularly appealing for ultrahigh density and low-cost, nonvolatile memory applications owing to its excellent cell scalability, MLC storage capability and 3D stackability. MLC technology is an alternative way to increase the storage density without the requirement of decreasing the physical device size or 3D stacking.

The MLC storage in ReRAM along with the resistance variability and reliability of multiple resistance levels were discussed in detail in this chapter. Then, various MLC operation schemes and their physical mechanisms have been explored. A comprehensive analysis of variability of multiple resistance levels by identifying various factors such as cycle-to-cycle and device-to-device nonuniformity, RTN, effect of ambient temperature and interstate switching variability have been provided, which can help in estimating the safe resistance margin to ensure the successful MLC operation.

The temporal and spatial switching variability contribute most in resistance margin degradation. (Does not apply to 4DS)

Finally, the reliability characteristics such as retention and endurance of MLC levels and the impact on the MLC operation have been assessed. The retention and endurance of the MLC operation is limited by that resistance level which has the worst endurance/retention time. 10^9 all day hungover and 10^12 commonly recorded which aint infinity but hey we are getting better, hahaha

Many of these systems use FPGAs or GPUs with SRAM-based memory. In R&D, the industry is working on ReRAM for this segment. ReRAM is much denser than the GPU/SRAM architecture, and new tooling or techniques may be required. “Lam is working very closely with our customers to identify the specific needs in etching, clean and deposition for emerging memories including ReRAM,” said Lam’s Lill. “Because new materials are involved, innovative solutions are needed.”

The use of specialized hardware like ReRAM is often associated with neuromorphic computing, as well. “Neuromorphic is analog,” Ping said. “OxRAM has that property.

The resistance can be changed to meet the needs of neuromorphic computing.”A neuromorphic system, however, would require a cascade of multi-stacked ReRAM devices. As stated above, a single ReRAM device is a difficult technology to control. (For everyone else that is....!)

As to which memories are most likely to succeed, well, even analysts are reluctant to make a call. A report by Jim Handy, general director of Objective Analysis, forecasts DRAM, NAND flash, MRAM, and “3D XPoint” – Intel’s Optane technology. But, he notes, “…what we represent as embedded MRAM could become ReRAM or possibly even some other emerging memory, if that emerging memory ramps faster.” He’s not declaring MRAM to be the winner. It’s a stand-in for whichever memories emerge alive from the competition.

The forecast does not spell out sales by emerging memory type because it is still too early to know which one technology will assume leadership in this market. It is most likely, however, that only one technology, or at most two, will reach prominence, since most emerging memories have very similar characteristics and all of them can be produced between the metal layers of the base chip. The economies of scale will allow one technology to develop a significantly better cost structure than any of its competitors, causing the market to gravitate toward a single winning technology.

Figure if you only live once then there aint no point in hedging....