4DS - Anything but Charting, page-15496

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Brian Wang | October 22, 2016
Developing memory storage that is not reliant upon a filament allows cell currents to scale down in line with cell size enabling the smaller geometries necessary to put more storage on a memory chip creating high density memory.
A filament-less switching mechanism can operate with low switching currents, due to much more stable currents, essential for high density gigabyte range memories and the retention of data.
4DS has developed a way of controlling the overall resistance of the memory cells using the diffusion of oxygen atoms across the interface and this mechanism is used to reliably control gigabyte memory intended for large-scale storage.

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