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4DS - Anything but Charting, page-18555

  1. 2,651 Posts.
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    Yo, Chill Beach..... we got this.. And look, even "the dige" thought this would be out the door before now so lets got go blaming anyone over production deliverables and unavoidable & unforeseen delays.

    Anyone tried to get anything fixed under the new covid world order? It takes months just to get in to a repair facility!

    And while we're at it note that back in the day the 40nm cell equated to a 30-50% increase over the incumbent tech... Not what do we think the smallest geometry might equate too with regards to uplift in storage capacity? hehe ;-) 8tey

    4DS Memory LimitedShaw and Partners Flashnote 27-10-2016
    Highlights
     40nm ReRAM – an unexpected and significant development. Investors had been hoping for a 45nm cell, but 4DS surpassed expectations delivering 40nm cells which are significantly smaller than the incumbent 45nm to 50nm 3D NAND Flash cells, and
    provide the basis for a compelling commercial proposition. We believe that reaching 40nm has significantly reduced investor risk.

    40nm ReRAM cells equate to a 30% to 50% uplift in storage capacity over incumbent technology. In addition, the 4DS patented interface switching technology, due to its non-filamentary mechanism, has physical characteristics that will enable scaling down to even smaller sizes over future years, further lifting storage capacity; whereas the scalability for 3D Flash looks to have been exhausted. 4DS will now seek to characterise its cells over a larger sample set that reflects statistical significance; ahead of, we expect, demonstrating commercial viability of its technology in CY17.

    17 August 2021

    Second Platform Lot wafers demonstrated both device-scaling to imec’s minimum geometry and memory switching with an access device on 300mm wafers using state-of-the-art production equipment


    Note 27-10-16: Competitive next generation data centre storage technology hasn’t yet been commercialised. Interface Switching ReRAM is an emerging, non-volatile memory technology, unique to 4DS, that can potentially be scaled down to even smaller sizes, essential for data centres and cloud storage. We believe that 4DS is the only non-filamentary ReRAM company with a global partner. The long lead times to develop such technology (10+ years), suggests that it is unlikely that there will be a short term challenge to the 4DS technology, which has been in development over the past decade, as the next generation non-volatile memory solution forecast to take US$6-7b share of the US$40b Flash memory market by 2020.

    Keypoints
     Over 2H16 WDC executives began publicly stating that ReRAM will be a part of WDC’s future. Comments include:

    i) In August 2016, at the Flash Memory Summit, Siva Sivaram, Head of Memory at WDC, made the first public disclosure that ReRAM was the technology that WDC would move ahead with. “We have evaluated all the options and have decided this [ReRAM] is the way we will go,” “We are committed to ReRAM…it is scalable…with greater density, lower cost and latency and longer endurance” [than X-Point].

    You can build a universal memory over time with [ReRAM] technology.

    He added that he expects the ReRAM technology will ship before 2020 and stated ReRAMs will be the big wave of the future,

    ii) At WDCs December 2016 analyst day in California, WDC in an extensive presentation clarified where ReRAM will fit into its offering and the broader market. The company stated that it will continue to produce 3D NAND for flash memory, but will move to ReRAM for storage class memory. With falling cost of producing NAND it no longer views ReRAM as a lower cost option than 3D NAND, but recognises its superior performance relative to NAND, its lower prices than DRAM, and that it is more scalable than X-Point. We note these disclosures are consistent with the way 4DS management has previously set up our expectations regarding the prospects for its ReRAM.

    Mac Equity Partners 13-6-2017

    Competition
    4DS is the major player targeting non-filamentary ReRAM as a new form of Storage Class Memory. Many other competitors are limiting their efforts by focussing on filamentary ReRAM applications in specific markets (see Figure 3). The product differentiation is likely to be sustained due to patents and other proprietary technologies. New entrants would find it difficult to enter the market as the industry by its nature has high barriers to entry, requires technically astute staff with large capital investment, and is difficult to achieve partnerships to drive commercialisation with large entities

    https://hotcopper.com.au/data/attachments/3583/3583402-14887afaf1c26d8cb94d7f90f0b3458a.jpg

 
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