4DS - Anything but Charting, page-22119

I think there are six important questions for the board in the coming general meeting:
1) Can you please confirm that we are still on track for a July out of fab date and if not, would we have been informed by now if there was an issue with the short loop?
2) To Ken: Why did you come out of retirement to join 4DS? Were you sick of golf or do you see something special in 4DS?
3) Can you explain how you go from being near DRAM speed, then increase speed by up to an order of magnitude to still remain "near DRAM speed"?
4) Can you please provide some colour on how the tiers in the sales bonus pool were set? Only because the company has made some giant leaps forward towards success since the sales bonus pool was communicated and Kens compensation is tied directly to these same historical tiers in the pool.
5) Can you please confirm that material savings in power consumption remain a benefit of 4DS reram vs DRAM with the fully crystaline PCMO cells?
6) Can you please confirm for 4DS endurance metrics, having a cell read multiple times does not degrade the life of the cell, and that only writing to the cell exhausts the cell? (Or is this behavior different for interface switching Reram where both read and write processes deplete the life of the cell?)

Thats all for now.