4DS - Anything but Charting, page-23738

SPEED DISCUSSION

Storage
NAND FLASH : 80 microseconds 8x10^-5

Intel Optane SSD : 10 microseconds 1x10^-5

Intel Optane
Intel Optane PMem App Direct Mode "Non-Volatile" : 1 microsecond 1x10^-6 (speed no where near DRAM)

DRAM
Intel Optane PMem Memory Mode "Volatile" : 350 nanoseconds 3.5x10^-7 (Close to DRAM, loses data after power loss)

*** 13 June 2017 - "4DS Interface Switching ReRAM reaches read speed comparable to DRAM"
(This would have to be ?x10^-7)

Lower Range DRAM : 100 nanoseconds 1x10^-7

*** 24 June 2020 - 4DS Memory, "best recorded speed at near DRAM exceeds storage class memory requirements without the need for speed crippling error correction". (Exceeding Storage Class Memory requirements would have to mean we are at minimum equal with DRAM lower end range of 100 nanoseconds 1x10^-7).

Typical DRAM speed : 60 nanoseconds 6x10^-8

Upper Range DRAM : 15 nanoseconds 1.5x10^-8

SRAM

*** 24 June 2020 - 4DS Memory, "Third Non-Platform Lot wafers yielded an order of magnitude decrease in cell on-resistance which translates in an up to one order of magnitude boost in read speed". (This is where 4DS Non-Filament Interface Switching ReRAM would now be comparable with SRAM speed if we consider the one order of magnitude boost from 100 nanoseconds 1x10^-7 to 10 nanoseconds 1x10^-8).

SRAM : 10 nanoseconds 1x10^-8

Conclusion :

If we take the the worst possible speed that is close to DRAM which is similar to Intel Optane PMem (Volatile) Memory Mode at 350 nanoseconds 3.5x10^-7, after 4DS Memory 24 June 2020 boost of up to one order of magnitude we would be rated faster than typical DRAM speed at 60 nanoseconds 6x^10^-8 having 4DS technology rated at 35 nanoseconds 3.5x10^-8.