That October item should never have been published, contradicts...

That October item should never have been published, contradicts that facebook update, which wasn't particularly warm or favourable, talking about scaling down further, we have proved at 40nm, and know we can go smaller, but subject to the manufacturing restraints of IMEC presently.

The WBT product has been tested to 28nm, but there first product to market offering is at 130nm.
"Weebit says its ReRAM has DRAM-class speed (100ns write) and endurance (~1 million write cycles and 10-year retention".

Have they reported or forgotten our annoucement of the 18th of September,

4DS has now successfully completed the second test cycle of the Fourth Platform Lot and the analysis shows that
4DS has:
• Demonstrated write speed at 9.5 nanoseconds which significantly outperforms DRAM write speed
• Increased endurance in excess of 3 billion cycles on a megabit array
• Verified equivalent DRAM read speed
• Verified persistent memory with variable and tuneable retention

That is what they should have been reporting.