“This innovation pushes past the scaling limitations of today’s DRAM and positions NEO as a frontrunner in next-generation memory. ”Key Features and Benefits:
Unmatched Retention and Efficiency – Thanks to IGZO channel technology, 1T1C and 3T0C cell simulations demonstrate retention times of up to 450 seconds, dramatically reducing refresh power.
Verified by Simulation – TCAD (Technology Computer-Aided Design) simulations confirm fast 10-nanosecond read/write speeds and over 450-second retention time.
Manufacturing-Friendly – Uses a modified 3D NAND process, with minimal changes, enabling full scalability and rapid integration into existing DRAM manufacturing lines.
Ultra-High Bandwidth – Employs unique array architectures for hybrid bonding to significantly enhance memory bandwidth while reducing power consumption.
High Performance for Advanced Workloads – Designed for AI, edge computing, and in-memory processing, with reliable high-speed access and reduced energy consumption.
DRAM space is getting interesting
4DS Price at posting:
3.6¢ Sentiment: None Disclosure: Held
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