4DS Memory is based on 4F2 cell structure (F= Feature size), the...

4DS Memory is based on 4F2 cell structure (F= Feature size), the smallest layout achievable in advanced memory design.

Feature size of 60nm equates a 4F2 Cell Area of 14,400nm2
Feature size of 20nm equates a 4F2 Cell Area of 1,600nm2 (9x smaller than 60nm)

Here is an article referencing Samsung (2023) and SK hynix (2024) plans to develop 4F2 DRAM.
Samsung forms team to develop 4F2 DRAM for under 10nm - THE ELEC, Korea Electronics Industry Media
[News] SK hynix Plans to develop 4F2 DRAM to Reduce the Cost of EUV Processes by 50% | TrendForce News

Even if Samsung and SK Hynix succeed in developing 4F2 DRAM, they will still face inherent limitation due to the complexities of 1T1C (1 Transistor, 1 Capacitor) cell architecture. Regardless of DRAM being to 4F2 DRAM or 3D DRAM, it will never match the cost per bit of 4DS Memory, power efficiency and characteristics.

There is no reason why 4DS Memory cannot outright replace DRAM and HBM (3D DRAM).








This is the magic of 4DS Memory Area Based Technology (4DS Memory is the only known Area Based Memory Player)