4DS - Anything but Charting, page-6005

Basically the 4DS version should scale much better, be faster and will also a longer generational lifespan, lower power consumption and slightly different use cases for application. Essentially one might say a better "version" of ReRam (IMO).

"The 4DS memory cell is constructed using a perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide. Unlike Intel’s 3D Xpoint, CBRAM from Adesto Technologies or Crossbar‘s ReRAM the 4DS cells have no filaments and so should be easier to scale compared to filamentary ReRAM. The filament-less switching mechanism positions 4DS as a promising alternative to NAND Flash with lower power consumption, higher speed and greater endurance."

source: here