@Hateful8Post #:54259341prior to stealth mode ...2009 the stats...

@Hateful8

Post #:54259341

prior to stealth mode ...2009 the stats were exceptional ....


near DRAM speed ....'near' doesn't mean not there yet imo....

working memory where the upper limits of speed and retention remain hard to quantify - that's one of the contributing factors of working as opposed to storage....so no probs imo ( as this tech potentially satisfies both classifications)
IMEC + HGST / WD haven't stayed on board just for a Christmas card every year... though you always feel warm and fuzzy when it arrives ...(nope!)

Pfluger said. ”The 4DS method uses existing semiconductor processes and requires fewer changes to the semiconductor manufacturing equipment, enabling simple manufacturing through a technology that can be scaled significantly farther than NAND or NOR flash.”

4DS’ RRAM is a high-capacity, non-volatile memory with fast switching speeds measured below 5-ns, and with an endurance of 1 billion write/read cycles. Compared to flash memory, RRAM requires lower voltages and lower currents, enabling its use in low power applications, he said.

stress this is just my read on a universal memory that may well lead the way in the DRAM space for some time to come for whoever acquires the tech.
(eyes on the Cartel imo)

2nd platform Lot - hope the company has additional reason to celebrate the 4th of July weekend

GLA