4DS - Anything but Charting, page-425

IEEE sometimes let you in scooter83.. so even from "Absract" of those studies you can steel some useful knowledge for example the existing non volatile( filamentary) memories compared to non filamentary PCMO solutions. The speed is just for start is about 25X faster plus the power consumption is 120-2850X lower then the other non volatile(filamentary) solutions. One of the reasons are field effect- the voltage dos not rushing trough to change the state of the memory heating up the filament inside the memory material( using large amount of energy witch would turn into heat)- contrary just an elecrtic field is applied to excite the memory cell.
Filament: a conducting wire or thread with a high melting point, forming part of an electric bulb or thermionic valve and heated or made incandescent by an electric current (in our case the memory cell)


If we compare the MOSFET transistor to non filamentary memory cell the idea is similar: only voltage have to be applied to Gate(G) to generate flow between the Drain and Source (MOSFET: metal oxide field effect transistor). Why this is a very important characteristic? Because this give the device a low power consumption:
"In evaluating 4DS’ technology, potential licensees or acquirers of the technology focus on four key metrics:Endurance: The number of times a memory cell can be switched from a low resistive state (LRS), representing a value of 1, to a high resistive state (HRS), representing a value of 0, and back is called cycling endurance.Retention: The amount of time a memory cell can stay in a LRS or HRS, and thus represent a value of 1 or 0.Access speed: The speed at which data can be written and read is called access speed. This needs to be sufficiently fast to make the technology suitable for various applications.Scalability: Improving the resolution (linewidth) of the memory cell; lower is better as narrower circuitry allows for more memory cells on the same surface. This reduces production costs per unit of memory (e.g. per GB) and lowers energy consumption of the memory chip.In 2017 4DS had already demonstrated extremely high access speeds for a non-volatile memory (NVM), i.e. close to DRAM speeds, while the individual memory cells had already been scaled down to a 40nm (nanometer) resolution in 2016.With the number of switching cycles (endurance) into the millions, 4DS has now demonstrated endurance for its memory cells which is well in excess of what is currently required by Storage Class Memory (SCM) applications, such as storage in data centres and on mobile phones. Typical endurance of single-level NAND Flash cells (SLC) is up to 100,000 cycles, while endurance of multi-levels cells (MLC) is typically around 10,000 cycles. In other words, we believe the endurance box is now well and truly ticked by 4DS."
https://investmentsrevolution.com/2019/02/australian-stocks/4ds-memory-asx-4ds-strong-test-results-from-latest-wafer-batch/
All in all 4DS is miles ahead of any existing ideas of filamentary ReRAM.In very near future this gonna be proven with upcoming iteration of D17.
As for the current SP in my (IMHO to be precise) opinion is ridiculously undervalued and i seriously think that i'm gonna be proven right. Good luck to ALL holders Kopasz