Ann: 4DS Memory Successfully Completes Fifth Platform Lot, page-41

Lets consider it now that they are having a CR. Which is in the forefront of traders minds, but, these 2 statements are the real reason all that time ago we asked can it be done, if this statement doesn't clear that up, and the words 20NM and the new manufacturing techniques they are saying are the key basically.

The purpose of the Fifth Platform Lot was to optimize the construction process of memory cell arrays to de-risk the
manufacturing of the first 4DS 20nm memory cell array incorporated in the Sixth Platform Lot.

•Memory cell array patterning and etching: new process tuning modifications for the construction of 20nm cells.• Memory cell array patterning and etching: new process tuning modifications for the construction of 20nm cells.• Memory stack adjustment: the advanced memory stacks which are necessary for the construction of 20nmcells have shown functionality and which de-risks the Sixth Platform Lot with similar memory cell stack constructions.• Memory array process integration: the best options of the post-patterning backend processes of the advanced memory cells were selected and implemented to the Sixth Platform Lot. These new learnings and optimizations from the Fifth Platform Lot are critically important for the successful processing of 4DS’s first 20nm memory cell array in the Sixth Platform Lot, expected to be manufactured and analyzed in 1H 2025. Interface Switching ReRAM technology as a potential generational memory.

This says to me, that they are almost 100% sure it's gonna happen. Generational memmory, It's gonna make the industry standard change.
They are baiting the hook with a big chunk of meat in shark infested waters. With this new CR.





•Memory stack adjustment: the advanced memory stacks which are necessary for the construction of 20nm
cells have shown functionality and which de-risks the Sixth Platform Lot with similar memory cell stack
constructions.
•Memory array process integration: the best options of the post-patterning backend processes of the advanced
memory cells were selected and implemented to the Sixth Platform Lot.
These new learnings and optimizations from the Fifth Platform Lot are critically important for the successful
processing of 4DS’s first 20nm memory cell array in the Sixth Platform Lot, expected to be manufactured and
analysed in 1H 2025. If the Company is successful in scaling from a 60nm memory cell to 20nm memory cell array,
then the Sixth Platform Lot will position 4DS’ area-based Interface Switching ReRAM technology as a potential
generational memory.
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