If you have a non-volatile memory capable of exceeding DRAM in read and write speeds, how much retention do you really need to provide storage capacity? 4DS doesn't require as much endurance as DRAM due to significantly reduced cycling requirements, and I think it's fair to say they have effectively created "infinite endurance" given the messaging from the company.
On the same basis, if you have sufficient energy efficiency and endurance why couldn't you just cycle your storage to match the retention of 4DS? You would then have storage operating at DRAM (or close to) speeds. Obviously retention is the key factor, and you'd need more than minutes or hours...but here is where tuneability comes in.
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