I am a holder of 4DS shares, and I read your comments in this thread.
You talked about the geometry. I did a brief research and I found you are right: DRAM geometry which began at about 90 nm is currently manufactured at 10 nm.
I can not consider the current geometry a significant weakness for 4ds technology. I believe scaling down to the same geometry of DRAM, I mean 10 nm, is not a hard task. The technology and the machinery are available to manufacture at 10 nm chips and 4ds can walk along that way. However, obviously, scaling down needs time, funding, more experimentation, and building knowledge. I just am saying this is not harder than what has been done so far by 4DS.
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